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PDF 2SC3518-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SC3518-Z | |
| Descripción | NPN Silicon Epitaxia | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
NPN Silicon Epitaxia
2SC3518-Z
Transistors
Features
Low VCE(sat).
Fast switching speed.
High DC current gain.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Total power dissipation *2
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
*1 PW 10 ms, duty cycle 50%
*2 When mounted on ceramic substrate of 7.5cm2X0.7mm
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Rating
60
60
7
5
7
2
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 7V, IC=0
VCE = 1V , IC = 2A
hFE
VCE = 1V , IC = 5A
VCE(sat) IC = 2A , IB = 0.2A
VBE(sat) IC = 2A , IB = 0.2A
fT VCE = 10V , IE = 500mA
ton VCC = 10V, RL=5Ù
tstg IC = 2A ,
toff IB1 = -IB2 = 0.2A
Min Typ Max Unit
10 ìA
10 ìA
100 400
V
50
0.3 V
1.2 V
120 MHz
0.07 1 ìs
0.8 2.5 ìs
0.12 1 ìs
hFE Classification
Marking
hFE
M
100 200
L
150 300
K
200 400
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