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Teilenummer | 2SC3123 |
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Beschreibung | Silicon NPN RF Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 4 Seiten INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3123
DESCRIPTION
·High Conversion Gain
Gce = 23dB TYP.
·Low Reverse Transfer Capacitance
Cre = 0.4pF TYP.
APPLICATIONS
·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
20 V
VEBO Emitter-Base Voltage
3V
IC Collector Current-Continuous
50 mA
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
25 mA
0.15 W
125 ℃
-55~125
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ 2SC3123 Schematic.PDF ] |
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