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2SB1220 Schematic ( PDF Datasheet ) - Kexin

Teilenummer 2SB1220
Beschreibung Silicon PNP Epitaxial Planar Type
Hersteller Kexin
Logo Kexin Logo 




Gesamt 1 Seiten
2SB1220 Datasheet, Funktion
SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1220
Features
High collector-emitter voltage VCEO
Low noise voltage NV
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Rating
-150
-150
-5
-100
-50
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noixe voltage
Symbol
Testconditons
VCEO IC = -100 ìA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -100 V, IE = 0
hFE VCE = -5 V, IC = -10 mA
VCE(sat) IC = -30 mA, IB = -3 mA
fT VCB = -10 V, IE = 10 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -10 V, IC = -1 mA, GV = 80 dB,
NV Rg = 100KÙ, Function = FLAT
Min Typ Max Unit
-150
V
-5 V
-1 ìA
130 450
-1 V
200 MHz
4 pF
150 mV
hFE Classification
Marking
Rank
hFE
R
130 220
I
S
185 330
T
260 450
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