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PDF SIA430DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA430DJ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 20-V (D-S) MOSFET
SiA430DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0135 at VGS = 10 V
20
0.0185 at VGS = 4.5 V
ID (A)b, c
12a
10.8
Qg (Typ.)
5.3 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
PowerPAK SC-70-6L-Single
D
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Marking Code
Part # code
AKX
XXX
Lot Traceability
and Date code
Ordering Information: SiA430DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
Limit
20
± 20
12a
12a
12a, b, c
10.1b, c
40
12a
2.9b, c
19.2
12.3
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68685
S-81173-Rev. A, 26-May-08
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35 25
SiA430DJ
Vishay Siliconix
28 20
21 15
14 Package Limited
10
75
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TJ - Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68685
S-81173-Rev. A, 26-May-08
www.vishay.com
5
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