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PDF IKA03N120H2 Data sheet ( Hoja de datos )
| Número de pieza | IKA03N120H2 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for:
- TV – Horizontal Line Deflection
C
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- Eoff optimized for IC =3A
G
E
P-TO220-3-31
(FullPAK)
P-TO220-3-34
(FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
VCE
1200V
1200V
IC
3A
3A
Eoff
0.15mJ
0.15mJ
Tj
150°C
150°C
Marking
Package Ordering Code
K03H1202 P-TO-220-3-31 Q67040-S4649
K03H1202 P-TO-220-3-34 Q67040-S4655
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (VGE = 15V)
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
8.2
9
9
Unit
V
A
9.6
3.9
±20
29
-40...+150
260
V
W
°C
Power Semiconductors
1
Mar-04, Rev. 2
Free Datasheet http://www.datasheet4u.com/
1 page  
IKA03N120H2
12A
Ic
10A
8A
6A TC=25°C
4A TC=100°C
2A Ic
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
30W
10A
1A
t p = 1 0 µs
2 0 µs
5 0 µs
1 0 0 µs
0,1A
1ms
100ms
DC
0,01A 1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
8A
20W
10W
6A
4A
2A
0W
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Mar-04, Rev. 2
Free Datasheet http://www.datasheet4u.com/
5 Page 
IKA03N120H2
4A TJ=150°C
2A
T J= 2 5 °C
0A
0V 1V 2V 3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
3.0V
I =4A
F
2.5V IF=2A
IF=1A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
Power Semiconductors
11
Mar-04, Rev. 2
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IKA03N120H2.PDF ] | |
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