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PDF K4003 Data sheet ( Hoja de datos )
| Número de pieza | K4003 | |
| Descripción | MOSFET ( Transistor ) - 2SK4003 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K4003 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 1.7 Ω (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
６．５±０．２
５．２±０．２
０．９
２．３ ２．３
０．６ MAX．
１．１±０．２
０．６ MAX
Characteristic
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
3
12
20
168
3
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
⎯
JEITA
TOSHIBA
⎯
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
www.DataSheet4U.ocpoemrating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (ch−a)
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.2 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-08
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K4003.PDF ] | |
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