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Teilenummer | 2SA1962 |
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Beschreibung | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 4 Seiten TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1962
Power Amplifier Applications
2SA1962
Unit: mm
• High breakdown voltage: VCEO = −230 V (min)
• Complementary to 2SC5242
• Recommended for 80-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−230
V
Collector-emitter voltage
V CEO
−230
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −15 A
Base current
IB −1.5 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 130 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ 2SA1962 Schematic.PDF ] |
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