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PDF AUIRFR4620 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR4620 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
PD - 97681
AUIRFR4620
HEXFET® Power MOSFET
D VDSS
200V
RDS(on) typ.
64m:
max. 78m:
S ID
24A
G
Gate
D
S
G
D-Pak
AUIRFR4620
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
24
17
100
144
0.96
± 20
113
See Fig. 14, 15, 22a, 22b,
54
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.d0a6t/a1s0h/e1e1t4u.com/
1 page  
100
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
30
1.6
25
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
175
2.5
2.0
1.5
1.0
0.5
0.0
-50 0 50 100 150
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
200
AUIRFR4620
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
260
Id = 5mA
250
240
230
220
210
200
190
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
500
450 ID
TOP
2.05A
400 2.94A
350 BOTTOM 15A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFR4620
Ordering Information
Base part number
AUIRFR4620
Package Type
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part Number
AUIRFR4620
AUIRFR4620TR
AUIRFR4620TRL
AUIRFR4620TRR
www.irf.com
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR4620.PDF ] | |
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