Datenblatt-pdf.com


N0600N Schematic ( PDF Datasheet ) - Renesas

Teilenummer N0600N
Beschreibung MOS FIELD EFFECT TRANSISTOR
Hersteller Renesas
Logo Renesas Logo 




Gesamt 8 Seiten
N0600N Datasheet, Funktion
N0600N
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0220EJ0100
Rev.1.00
Jan 25, 2011
Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on)1 = 25 mMAX. (VGS =10 V, ID = 15 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low input capacitance
Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.
N0600N-S17-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50p/tube
Package
Isolated TO-220
typ. 2.2 g
Note: 1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±30
±60
20
2.0
150
55 to +150
9.2
12.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
6.25
62.5
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V
°C/W
°C/W
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/






N0600N Datasheet, Funktion
N0600N
Package Drawings (Unit: mm)
Isolated TO-220
10.0±0.3
4.7±0.2
3.2±0.2
2.54±0.2
Chapter Title
Equivalent Circuit
1.47 MAX
0.8±0.2
2.54 TYP.
2.76±0.2
0.50±0.1
2.54 TYP.
1 23
1. Gate
2. Drain
3. Source
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page







SeitenGesamt 8 Seiten
PDF Download[ N0600N Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
N0600NMOS FIELD EFFECT TRANSISTORRenesas
Renesas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche