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PDF AP09N70R-H Data sheet ( Hoja de datos )

Número de pieza AP09N70R-H
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP09N70R-H Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
100% Avalanche Rated
Fast Switching Characteristics
Simple Drive Requirement
G
AP09N70P/R-H
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
700V
RDS(ON)
0.85Ω
ID 8.3A
S
Description
AP09N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The TO-262 type
GDS
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,ruggedized
design and cost-effectiveness.
The TO-220 and TO-262 package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+30
8.3
5.2
40
156
32
8
32
-55 to 150
-55 to 150
TO-220(P)
TO-262(R)
Units
V
V
A
A
A
W
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.8
62
Unit
/W
/W
Data & specifications subject to change without notice
1
200912283
Free Datasheet http://www.datasheet4u.com/

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