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PDF AP0903GMA Data sheet ( Hoja de datos )
| Número de pieza | AP0903GMA | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP0903GMA
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ SO-8 similar area footprint and pin assignment
▼ Low Gate Charge
▼ Fast Switching Speed
D
▼ RoHS Compliant
G
Description
S
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
D
SSS G
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
Rating
30
±20
60
38
195
45
0.36
29
24
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
2.8
85
Units
℃/W
℃/W
Data and specifications subject to change without notice
200401053-1/4
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP0903GMA.PDF ] | |
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