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Teilenummer | FGPF4633 |
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Beschreibung | PDP IGBT | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 8 Seiten FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
February 2010
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Potted)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
300
30.5
12.2
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
5
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
0.006
0.00001
0.0001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
FGPF4633 Rev. A
6 www.fairchildsemi.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ FGPF4633 Schematic.PDF ] |
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