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PDF PTFA082201E Data sheet ( Hoja de datos )
| Número de pieza | PTFA082201E | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 869 – 894 MHz
Description
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs
designed for CDMA and WCDMA power amplifier applications in
the 869 to 894 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA082201E
Package H-36260-2
PTFA082201F
Package H-37260-2
PTFA082201E
PTFA082201F
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
50 -30
40 -35
30
20
10
0
30
ACPR IMD
-40
-45
Gain -50
Efficiency
-55
35 40 45 50
Output Power, Avg. (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
894 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39.5 dBc
• Typical CW performance, 894 MHz, 30 V
- Output power at P–1dB = 250 W
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 30 V,
220 W (CW) output power
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average
ƒ1 = 884 MHz, ƒ2 = 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
— 18.0
—
dB
ηD
— 30
—
%
Intermodulation Distortion
IMD
— –37
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04.1, 2009-02-20
Free Datasheet http://www.datasheet4u.com/
1 page  
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0 20 40 60 80
Case Temperature (°C)
100
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
850
870
890
910
930
G
S
Z Source Ω
R jX
1.792
–1.910
1.764
–1.624
1.737
–1.360
1.693
–1.147
1.703
–0.896
Z Load Ω
R jX
1.999
–0.196
1.963
0.165
1.924
0.485
1.854
0.793
1.853
1.087
PTFA082201E
PTFA082201F
Z0 = 50 Ω
Z Load
Z Source
0.1
930 MHz
850 MHz
930 MHz
850 MHz
Data Sheet
5 of 10
Rev. 04.1, 2009-02-20
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PTFA082201E.PDF ] | |
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