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PDF PTFA041501F Data sheet ( Hoja de datos )
| Número de pieza | PTFA041501F | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
Description
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications.
They are available in thermally-enhanced ceramic open-cavity
packages . Manufactured with Infineon's advanced LDMOS process,
these devices provide excellent thermal performance and superior
reliability.
PTFA041501E
Package H-36248-2
PTFA041501F
Package H-37248-2
PTFA041501E
PTFA041501F
Single-carrier CDMA IS-95 Performance
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
36
–15°C
25°C
90°C
Efficiency
ACPR
ALT
38 40 42 44 46
Average Output Power (dBm)
45
40
35
30
25
20
15
10
5
0
48
Features
• Broadband internal matching
• Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
• Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz
Characteristic
Symbol Min Typ Max Unit
Gain
Gps — 21 — dB
Drain Efficiency
ηD
— 41
—
%
Adjacent Channel Power Ratio
ACPR
— –33
—
dB
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01.1, 2010-01-20
Free Datasheet http://www.datasheet4u.com/
1 page  
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
450
455
460
465
470
Z Source Ω
R jX
0.88 –3.20
0.84 –3.20
0.84 –3.10
0.84 –3.00
0.83 –2.90
Z Load Ω
R jX
1.33 0.22
1.35 0.31
1.40 0.38
1.41 0.47
1.44 0.57
See next page for circuit information
PTFA041501E
PTFA041501F
Z0 = 50 Ω
Z Load
470 MHz
450 MHz
Z Source
470 MHz
450 MHz
0.1
Data Sheet
5 of 11
Rev. 01.1, 2010-01-20
5 Page 
PTFA041501EF V4
Confidential, Limited Internal Distribution
Revision History:
2010-01-20
Previous Version:
none
Page
Subjects (major changes since last revision)
6, 9, 10
Minor cosmetic changes only
Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2010-01-20
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 01.1, 2010-01-20
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PTFA041501F.PDF ] | |
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