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PDF 2SA1016 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1016 | |
| Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
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Hay una vista previa y un enlace de descarga de 2SA1016 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:EN572D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions
unit:mm
2003A
[2SA1016, 1016K/2SC2362, 2362K]
( ) : 2SA1016, 1016K
Specifications
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
B : Base
C : Collecor
E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
2SA1016, 2SC2362
(–)120
(–)100
2SA1016K,
2SC2362K
(–)150
(–)120
(–)5
(–)50
(–)100
400
125
–55 to +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Noise Level
Noise Peak Level
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VNO(ave)
VNO(peak)
IC=(–)10mA, IB=(–)1mA
IC=(–)10µA, IE=0 [A1016, C2362]
IC=(–)10µA, IE=0 [A1016K, C2362K]
IC=(–)1mA, RBE=∞ [A1016, C2362]
IC=(–)1mA, RBE=∞ [A1016K, C2362K]
IE=(–)10µA, IC=0
VCC=30V, IC=1mA, Rg=56kΩ, VG=77dB/1kHz
VCC=30V, IC=1mA, Rg=56kΩ, VG=77dB/1kHz
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows :
160 F 320 280 G 560 480 H 960
Ratings
min typ
160*
(110)
130
(2.2)
1.8
(–)120
(–)150
(–)100
(–)120
(–)5
max
(–)1.0
(–)1.0
960*
(–)0.5
35
200
Unit
µA
µA
MHz
pF
V
V
V
V
V
V
mV
mV
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1016.PDF ] | |
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