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Teilenummer | 7N70 |
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Beschreibung | N-CHANNEL POWER MOSFET | |
Hersteller | Unisonic Technologies | |
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Gesamt 8 Seiten UNISONIC TECHNOLOGIES CO., LTD
7N70
7 Amps, 700 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 7N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
http://www.DataSheet4U.com/
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
7N70L-TF3-T
7N70G-TF3-T
7N70L-TF1-T
7N70G-TF1-T
Package
TO-220F
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-103,B
7N70
TYPICAL CHARACTERISTICS
Power MOSFET
Maximum Safe Operating Area
Operation in This Area is Limited by RDS(ON)
100µs
10
1ms
1
0.1
1
Notes:
1. TJ=25℃
2. TJ=150℃
3. Single Pulse
10
10ms
DC
100 1000
Drain-Source Voltage, VDS (V)
Maximum Drain Current vs. Case
Temperature
8
6
http://www.DataSheet4U.com/
4
2
0
25 50 75 100 125 150
Case Temperature, TC (℃)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-103,B
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 7N70 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
7N70 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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