|
|
Teilenummer | NGTB40N120IHLWG |
|
Beschreibung | IGBT | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 8 Seiten NGTB40N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
80
40
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 320 A
IF A
80
40
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
320
$20
260
104
A
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V
VCEsat = 1.90 V
Eoff = 1.40 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB40N120IHLW/D
datasheet pdf - http://www.DataSheet4U.net/
NGTB40N120IHLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.48
0.1 20%
10%
5%
0.01 2%
1%
0.001
0.000001
Single Pulse
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn
Case
Ri (°C/W)
0.01616
ti (sec)
1.0E−4
0.04030 1.76E−4
0.060
0.002
0.090
0.03
Cn
0.176
0.093
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
10
100
1000
10
1 50% Duty Cycle
RqJC = 1.5
20%
10%
0.1 5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
Junction R1
Ci = ti/Ri
C1
http://www.DataSheet4U.net/
R2
C2
0.01 0.1
PULSE TIME (sec)
Rn Case Ri (°C/W) ti (sec)
0.19655 1.48E−4
0.414
0.002
0.5 0.03
0.345
0.1
Cn
0.0934
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1 10 100
Figure 19. Diode Transient Thermal Impedance
100
Figure 20. Test Circuit for Switching Characteristics
http://onsemi.com
6
datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ NGTB40N120IHLWG Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
NGTB40N120IHLWG | IGBT | ON Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |