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PDF NGTB40N120FLWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB40N120FLWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB40N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Low Saturation Voltage using NPT Trench with Field Stop
Technology
• Low Switching Loss Reduces System Power Dissipation
• 10 ms Short Circuit Capability
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed
by TJmax
current,
Tpulse
limited
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TSC
TJ
1200
80
40
320
V
Ahttp://www.DataSheet4U.net/
A
A
80
40
320 A
$20
260
104
10
V
W
ms
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.6 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N120FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB40N120FLW/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NGTB40N120FLWG
TYPICAL CHARACTERISTICS
35
30
25
20
TJ = 25°C
15
10 TJ = 150°C
5
0
0 50 100 150 200 250 300 350 400 450
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
20
15
VCE = 600 V
10
5
0
0 60 120 180 240 300 360 420 480
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
3.5
3
Eon
2.5
2
Eoff
1.5
1000
100
td(off)
tf
td(on)
tr
1 VCE = 600 V
10 VCE = 600 V
VGE = 15 V
0.5 IC = 40 A
http://www.DataSheet4U.net/
VGE = 15 V
IC = 40 A
Rg = 10 W
Rg = 10 W
0
0 20 40 60 80 100 120 140 160
1
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
8
7
6 Eoff
5 Eon
4
3
2
VCE = 600 V
VGE = 15 V
1 TJ = 150°C
Rg = 10 W
0
5 15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
td(off)
td(on)
tr
tf
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1 5 15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
5
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