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Teilenummer | NGTB30N120IHSWG |
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Beschreibung | IGBT | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 8 Seiten NGTB30N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
60
30
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
60
30
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.00 V
Eoff = 1.0 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N120IHS
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N120IHSWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB30N120IHSW/D
datasheet pdf - http://www.DataSheet4U.net/
NGTB30N120IHSWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.65
20%
0.1 10%
5%
2%
0.01 1%
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.02659 1.0E−4
0.06231 1.76E−4
0.10246 0.002
0.2121
0.1
Cn
0.1057
2.0
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
RqJC = 2.0
Junction R1
Ci = ti/Ri
C1
http://www.DataSheet4U.net/
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.25813 1.48E−4
0.57713 0.002
0.67147 0.03
0.38693
0.1
Cn
0.1057
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
Figure 20. Diode Transient Thermal Impedance
10
100 1000
Figure 21. Test Circuit for Switching Characteristics
http://onsemi.com
6
datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ NGTB30N120IHSWG Schematic.PDF ] |
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