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PDF NGTB25N120LWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB25N120LWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB25N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Inverter Welding Machines
• Microwave Ovens
• Industrial Switching
• Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
VCES
IC
Value
1200
50
25
Unit
http://www.DataSheet4U.net/
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Short−Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
Operating junction temperature
range
Tsc
TJ
5
−55 to +150
ms
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120LWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 4
1
Publication Order Number:
NGTB25N120L/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NGTB25N120LWG
TYPICAL CHARACTERISTICS
10,000
1000
100
td(on)
td(off)
tf
tr
10 VCE = 600 V
VGE = 15 V
IC = 25 A
1 TJ = 150°C
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. Rg
85
8
7
VGE = 15 V
IC = 25 A
6
Rg = 10 W
TJ = 150°C
5
Eon
4
3
2 Eoff
1
0
375 425 475 525 575 625 675 725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Energy Loss vs. VCE
1000
100
tf
td(off)
td(on)
1000
100
10
1 ms
50 ms
dc operation
100 ms
tr
10 VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
1
375 425 475 525 575 625 675 725
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
775
1
0.1
http://www.DataSheet4U.net/
0.01
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
1000
100
10
VGE = 15 V, TC = 125°C
1 1 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
http://onsemi.com
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NGTB25N120LWG.PDF ] | |
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