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Número de pieza | NGTB15N60EG | |
Descripción | IGBT | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged co−packaged
reverse recovery diode with a low forward voltage.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• Soft Fast Reverse Recovery Diode
• 10 ms Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• This is a Pb−Free Device
Typical Applications
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse limited by
TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited by
TJmax
Gate−emitter voltage
Power dissipation
@ TC = 25°C
@ TC = 100°C
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
Operating junction temperature range
VCES
IC
ICM
IF
IFM
VGE
PD
tSC
TJ
600
30
15
120
30
15
120
$20
117
47
10
−55 to
+150
Vhttp://www.DataSheet4U.net/
A
A
A
A
V
W
ms
°C
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
TSLD
260
°C
case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 600 V
VCEsat = 1.7 V
C
G
E
C
G CE
TO−220
CASE 221A
STYLE 4
MARKING DIAGRAM
15N60G
AYWW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB15N60EG
TO−220 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 6
1
Publication Order Number:
NGTB15N60E/D
datasheet pdf - http://www.DataSheet4U.net/
1 page NGTB15N60EG
TYPICAL CHARACTERISTICS
35
30 −40°C
25
25°C
20
15
10 150°C
5
0
0 0.5 1 1.5 2 2.5
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
20
IC = 15 A
15
10
VCES = 120 V
VCES = 480 V
5
0
0 20 40 60 80 100
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.2 1000
1
0.8
0.6
0.4
0.2
0
0
Eoff
Eon
VCE = 400 V
VGE = 15 V
IC = 15 A
Rg = 22 W
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
tf
td(off)
100 td(on)
tr
10
http://www.DataSheet4U.net/
10
VCE = 400 V
VGE = 15 V
IC = 15 A
Rg = 22 W
20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
200
3
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 22 W
2
1000
tf
Eon td(off)
100 td(on)
tr
1
Eoff
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 22 W
01
8 12 16 20 24 28 32
8 12 16 20 24 28 32
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page |
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