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PDF AUIRFB8409 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFB8409 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFB8409 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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AUTOMOTIVE GRADE
AUIRFB8409
AUIRFS8409
AUIRFSL8409
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Applications
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) (SMD) typ. 0.97mΩ
max. 1.2mΩ
cG
ID (Silicon Limited)
409A
S ID (Package Limited)
195A
DD
DS
G
TO-220AB
AUIRFB8409
S
G
D2Pak
AUIRFS8409
D
S
D
G
TO-262
AUIRFSL8409
G
Gate
D
Drain
S
Source
Base part number
AUIRFB8409
AUIRFS8409
AUIRFS8409
AUIRFSL8409
Package Type
TO-220
D2-Pak
D2-Pak
TO-262
Standard Pack
Form
Tubehttp://www.DataSheet4U.net/
Tube
Tape and Reel Left
Tube
Quantity
50
50
800
50
Orderable Part Number
AUIRFB8409
AUIRFS8409
AUIRFS8409TRL
AUIRFSL8409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
409
289
195
1524
375
2.5
Units
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
lSingle Pulse Avalanche Energy Tested Value
ÃdAvalanche Current
dRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
± 20
760
1360
See Fig. 14, 15, 24a, 24b
-55 to + 175
300
x x10lbf in (1.1N m)
V
mJ
A
mJ
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013
datasheet pdf - http://www.DataSheet4U.net/
1 page  
AUIRFB/S/SL8409
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
http://www.DataSheet4U.net/
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
800
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
700
600
BOTTOM 1.0% Duty Cycle
ID = 100A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
400 during avalanche).
6. Iav = Allowable avalanche current.
300 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
200 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
100 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 www.irf.com © 2013 International Rectifier
April 30, 2013
datasheet pdf - http://www.DataSheet4U.net/
5 Page 
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRFB/S/SL8409
http://www.DataSheet4U.net/
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRFS8409
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
April 30, 2013
datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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