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PDF MBR6060 Data sheet ( Hoja de datos )

Número de pieza MBR6060
Descripción (MBR6045 - MBR60100R) Schottky Power Diode
Fabricantes Naina Semiconductor 
Logotipo Naina Semiconductor Logotipo



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No Preview Available ! MBR6060 Hoja de datos, Descripción, Manual

Naina Semiconductor Ltd.
MBR6045 thru
MBR60100R
Features
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
Schottky Power Diode, 60A
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Continuous forward current
TC ≤ 100oC
VDC
IF
Surge non-repetitive forward
current, half-sine wave
TC = 25oC
IFSM
Forward voltage
Reverse current
IF = 60 A
TJ = 25oC
VR = 20V,
TJ = 25oC
VR = 20V,
TJ = 125oC
VF
IR
MBR6045(R) MBR6060(R) MBR6080(R)
45 60 80
32 42 57
45 60 80
60 60 60
700
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700
700
0.65 0.75 0.84
555
150 150 150
MBR60100(R)
100
70
100
60
700
0.84
5
150
Unit
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol MBR6045(R) MBR6060(R) MBR6080(R)
Maximum thermal resistance, junction to
case
Rth(JC)
1.0
Operating junction temperature range
Storage temperature
TJ
Tstg
-65 to 150
-65 to 175
Mounting torque (non-lubricated threads)
F
4.0
Approximate allowable weight
W
17.0
MBR60100(R)
Unit
oC/W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/

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