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PDF AOD484 Data sheet ( Hoja de datos )

Número de pieza AOD484
Descripción 30V N-Channel MOSFET
Fabricantes FreesCale 
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AOD484
30V N-Channel MOSFET
General Description
The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
VDS (V) = 30V
ID = 25 A (VGS = 10V)
RDS(ON) < 15 m(VGS = 10V)
RDS(ON) < 23 m(VGS = 4.5V)
D
G
S
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Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
25
20
80
15
33
50
25
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17
55
2.3
Max
25
60
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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AOD484 pdf
AOD484
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
tA
=
L ID
BV VDD
25 TA=25°C
20
TA=150°C
15
10
5
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
25
20
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
500
150
40 60
TA=25°C
30
15 20
10
5
0
0
10
1
10
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25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
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