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PDF AOD484 Data sheet ( Hoja de datos )
| Número de pieza | AOD484 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD484
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD484 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOD484 is Pb-free (meets ROHS
& Sony 259 specifications). AOD484L is a Green
Product ordering option. AOD484 and AOD484L
are electrically identical.
TO-252
D-PAK
Features
VDS (V) = 30V
ID = 25 A (VGS = 10V)
RDS(ON) < 15 mΩ (VGS = 10V)
RDS(ON) < 23 mΩ (VGS = 4.5V)
UIS Tested!
D
Top View
Drain Connected to
Tab
GDS
G
http://www.DataSheet4U.net/
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.3mH C EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
25
25
80
15
33
50
25
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17
55
2.3
Max
25
60
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
datasheet pdf - http://www.DataSheet4U.net/
1 page  
AOD484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
tA
=
L⋅ID
BV − VDD
25 TA=25°C
20 TA=150°C
15
10
5
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
25
20
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
500
150
40 60
TA=25°C
30
15 20
10
5
0
0
10
1
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
10
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0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD484.PDF ] | |
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