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NJG1151MD7 Schematic ( PDF Datasheet ) - New Japan Radio

Teilenummer NJG1151MD7
Beschreibung 2-way Active Splitter GaAs MMIC
Hersteller New Japan Radio
Logo New Japan Radio Logo 




Gesamt 30 Seiten
NJG1151MD7 Datasheet, Funktion
NJG1151MD7
2-way Active Splitter GaAs MMIC
I GENERAL DESCRIPTION
The NJG1151MD7 is 2-way active splitter with normally loop
through switch GaAs MMIC for STB/Recorder/TV applications.
In order to simplify the tuner structure, the NJG1151MD7 does
not only offer a 2-way active splitter, but also supply loop
through switch for optimize the complicate circuit.
The NJG1151MD7 achieve better characteristics and high
ESD tolerance with less external components.
A small and ultra-thin package of EQFN14-D7 is adopted.
I PACKAGE OUTLINE
NJG1151MD7
I FEATURES
G Operating frequency
G Package
40 to 1000MHz
EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ.)
[ Active mode: Operating voltage 5.0V ]
G Operating current
100mA typ.
G Gain
6.0dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm)
G Noise figure
2.5dB typ. (Zs=Zl=50 ohm)
G CSO
60dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV)
G CTB
65dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV)
G Output to output isolation
20dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm)
http://www.DataSheet4U.net/
[ Through mode: Operating voltage 0V ]
G Insertion loss
0.4dB typ. (Zs=Zl=50 ohm)
I PIN CONFIGURATION
1pin INDEX
(Top View)
LNAIN
GND LNAOUT
14 13 12
1 11
GND
GND
2
SWOUT1
10
SPLIN
3
SWIN1
sspplliitttteerr
9
SPLOUT1
4
GND
5
SWOUT2
6
SWIN2
8
7 GND
SPLOUT2
Pin Connection
1. GND
8. GND
2. SWOUT1 9. SPLOUT1
3. SWIN1 10. SPIN1
4. GND
11. GND
5. SWOUT2 12. LNAOUT
6. SWIN2 13. GND
7. SPLOUT2 14. LNAIN
Exposed Pad: GND
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2012-06-29
-1-
datasheet pdf - http://www.DataSheet4U.net/






NJG1151MD7 Datasheet, Funktion
NJG1151MD7
I TERMINAL DESCRIPTION
Pin No.
1
2
3
4
5
6
SYMBOL
DESCRIPTION
GND
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal output terminal of the switch.
SWOUT1 RF signal is output through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
SWIN1
RF signal input terminal of the switch.
RF signal is input through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
GND
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal output terminal of the switch.
SWOUT2 RF signal is output through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
SWIN2
RF signal input terminal of the switch.
RF signal is input through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
7 SPLOUT2 RF signal output terminal of the splitter.
Ground terminal.
8 GND This terminal should be connected to the ground plane as close as possible
for excellent RF performance.http://www.DataSheet4U.net/
9 SPLOUT1 RF signal output terminal of the splitter.
10 SPLIN RF signal input terminal of the splitter.
11
12
13
14
Exposed
Pad
GND
LNAOUT
GND
LNAIN
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal output terminal of the LNA.
RF signal is output through the external circuit.
This terminal is also a voltage supply terminal of the switch and LNA,
Please supply the voltage through an inductor of the application circuit.
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal input terminal of the LNA.
RF signal is input through the external circuit.
This terminal is also a current adjustment terminal of the LNA,
Please connect to ground via a resistor of the application circuit.
GND Ground terminal.
-6-
datasheet pdf - http://www.DataSheet4U.net/

6 Page









NJG1151MD7 pdf, datenblatt
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1
Gain vs. VDD
(freq=620MHz)
10
8
RF IN to RF OUT1
6
RF IN to RF OUT2
4
2
0
-2
(Exclude PCB, connector Losses)
-4
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
NF vs. VDD
(freq=620MHz)
6
5
4
3 RF IN to RF OUT1
2 RF IN to RF OUT2
(Exclude PCB, connector Losses)
1
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
P-1dB(IN) vs. VDD
(freq=620MHz)
10
8 RF IN to RF OUT2
6
RF IN to RF OUT1
4
2
0
-2
-4
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
IIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-12dBm)
30
25
http://www.DataSheet4U.net/
20
15
RF IN to RF OUT1
RF IN to RF OUT2
10
5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
IM2 vs. VDD
(f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, Pin=-8dBm)
60
55 RF IN to RF OUT2
50
RF IN to RF OUT1
45
40
35
30
25
20
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
IM3 vs. VDD
(f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, Pin=-8dBm)
70
RF IN to RF OUT2
60
RF IN to RF OUT1
50
40
30
20
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
- 12 -
datasheet pdf - http://www.DataSheet4U.net/

12 Page





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