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K8P5616UZB Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K8P5616UZB
Beschreibung 256Mb B-die Page NOR FLASH
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 30 Seiten
K8P5616UZB Datasheet, Funktion
Rev. 1.0, Jun. 2010
K8P5616UZB
256Mb B-die Page NOR FLASH
256M Bit (16M x16, 32M x8), Page Mode
datasheet
http://www.DataSheet4U.net/
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
datasheet pdf - http://www.DataSheet4U.net/






K8P5616UZB Datasheet, Funktion
K8P5616UZB
3.0 PIN DESCRIPTION
Pin Name
A0 - A23
DQ0 - DQ14
DQ15/A-1
CE
OE
RESET
BYTE
RY/BY
WE
WP/ACC
Vcc
VSS
NC
datasheet
Rev. 1.0
NOR FLASH MEMORY
Pin Function
Address Inputs
Data Inputs / Outputs
DQ15 - Data Inputs / Outputs in word mode
A-1 - Address input in byte mode
Chip Enable
Output Enable
Hardware Reset Pin
Word/Byte selection
Ready/Busy Output
Write Enable
Hardware Write Protection/Program Acceleration
Power Supply
Ground
No Connection
http://www.DataSheet4U.net/
-6-
datasheet pdf - http://www.DataSheet4U.net/

6 Page









K8P5616UZB pdf, datenblatt
K8P5616UZB
datasheet
Rev. 1.0
NOR FLASH MEMORY
Command Definitions
Program Suspend 7) ,8)
Program Resume
CFI Query 9)
Enter OTP Block Region
OTP Block Program
OTP Block Read
Exit OTP Block Region
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Cycle
1
1
1
3
4
1
4
1st Cycle
(DA)XXXH
B0H
(DA)XXXH
30H
(DA)X55H
98H
555H
AAH
555H
AAH
RA
RD
555H
AAH
2nd Cycle
2AAH
55H
2AAH
55H
2AAH
55H
3rd Cycle
555H
88H
555H
A0H
555H
90H
4th Cycle
PA
PD
XXXH
00H
NOTE :
RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data, WBL : Write Buffer Location
BA : Block Address (A16 - A23), ABP : Address of the block to be protected or unprotected, X = Don’t care ., DA : Bank Address
DQ8 - DQ15 are don’t care in command sequence, except for RD and PD
A14 - A23 are also don’t care, except for the case of special notice.
1) To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
2) The 4th cycle data of Autoselect mode is output data.
3) Device ID must be read across cycles 4, 5 and 6.
Device ID data : X0EH = "2264H", X0FH = "2260H" for 256Mb Uniform Block Device
4) Command sequence resets device for next command after write-to-buffer operation.
5) The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
6) The Erase Suspend command is applicable only to the Block Erase operation.
7) The Read Operation is allowed in the Program Suspend mode.
8) The Program Suspend command is applicable to Program and Erase Suspend - Program operation.
9) Command is valid when the device is in read mode or Autoselect mode.
http://www.DataSheet4U.net/
5th Cycle 6th Cycle
- 12 -
datasheet pdf - http://www.DataSheet4U.net/

12 Page





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