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NJG1152KA1 Schematic ( PDF Datasheet ) - New Japan Radio

Teilenummer NJG1152KA1
Beschreibung Wide Band Low Noise Amplifier GaAs MMIC
Hersteller New Japan Radio
Logo New Japan Radio Logo 




Gesamt 28 Seiten
NJG1152KA1 Datasheet, Funktion
NJG1152KA1
Wide Band Low Noise Amplifier GaAs MMIC
I GENERAL DESCRIPTION
The NJG1152KA1 is a fully matched wide band low noise
amplifier GaAs MMIC for digital TV applications.
To achieve wide dynamic range, the NJG1152KA1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1152KA1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of FLP6-A1 is adopted.
I PACKAGE OUTLINE
NJG1152KA1
I FEATURES
G Operating frequency
40 to 900MHz
G Package size
FLP6-A1 (Package size: 1.6x1.6x0.55mm typ.)
[ LNA mode, 50 ohm: Operating voltage 3.3V ]
G Operating current
20mA typ.
G Small signal gain
18.0dB typ.
G Noise figure
1.2dB typ. @f=40 to 150MHz
0.9dB typ. @f=150 to 900MHz
[ Bypass mode, 50 ohm: Operating voltage 0V ]
G Insertion loss
1.0dB typ.
G 2nd order intermodulation distortion 75dB typ.
G 3rd order intermodulation distortion
85dB typ.
http://www.DataSheet4U.net/
I PIN CONFIGURATION
(Top View)
4
RFIN
5
GND
Bias
Circuit
6
VCTL
Logic
Circuit
3
RFOUT2
2
GND
1
RFOUT1
Pin connection
1. RFOUT1
2. GND
3. RFOUT2
4. RFIN
5. GND
6. VCTL
I TRUTH TABLE
VCTL
H
L
1pin Index
“H”=VCTL(H)“L”=VCTL(L)
LNA Bypass
ON
OFF
OFF
ON
Mode select
LNA mode
Bypass mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2012-08-17
-1-
datasheet pdf - http://www.DataSheet4U.net/






NJG1152KA1 Datasheet, Funktion
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
NF, Gain vs. frequency
(freq=40~1500MHz)
20 3.5
18
Gain
16
3.0
2.5
14 2.0
12 1.5
10
8
6
0
1.0
NF
0.5
(Exclude PCB, Connector Losses)
0.0
500
1000
1500
frequency (MHz)
20
10
0
-10
-20
-30
-40
Pout vs. Pin
(freq=620MHz)
Pout
P-1dB(IN)=-4.8dBm
-30 -20 -10
Pin (dBm)
0
19
Gain
18
Gain, IDD vs. Pin
(freq=620MHz)
17
16
15
14
-40
IDD
P-1dB(IN)=-4.8dBm
-30 -20 -10
Pin (dBm)
100
80
60
40
20
0
0
P-1dB(IN) vs. frequency
(freq=40~900MHz)
5
0
http://www.DataSheet4U.net/
-5
-10
-15
0
200 400 600 800
frequency (MHz)
1000
Pout, IM3 vs. Pin
(f1=620MHz, f2=f1+100kHz)
40
OIP3=+25.8dBm
20
Pout
0
-20
-40
-60
-80
-40
IM3
IIP3=+7.9dBm
-30 -20 -10 0 10
Pin (dBm)
IIP3, OIP3 vs. frequency
(f1=40~900MHz, f2=f1+100kHz, Pin=-20dBm)
30
OIP3
25
20
15
10 IIP3
5
0 200 400 600 800 1000
frequency (MHz)
-6-
datasheet pdf - http://www.DataSheet4U.net/

6 Page









NJG1152KA1 pdf, datenblatt
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. Temperature
(freq=620MHz)
0
RF OUT Return Loss vs. Temperature
(freq=620MHz)
0
55
10 10
15 15
20 20
25
-40
-20
0 20 40 60
Temperature (oC)
80 100
25
-40
-20
0 20 40 60
Temperature (oC)
80 100
Reverse Isolation vs. Temperature
(freq=620MHz)
10
15
20
25
30
-40
-20
0 20 40 60
Temperature (oC)
80 100
20
16
http://www.DataSheet4U.net/
12
8
4
0
0
K factor vs. frequency
(freq=50MHz~20GHz)
Ta -40oC
Ta +25oC
Ta +85oC
5 10 15
frequency (GHz)
20
IDD vs. Temperature
(RF OFF)
40
30
20
10
0
-40
-20
0 20 40 60
Temperature (oC)
80 100
30
25
20
15
10
5
0
0.0
IDD vs. Temperature
(RF OFF)
Ta -40oC
Ta +25oC
Ta +85oC
0.5 1.0 1.5
VCTL (V)
2.0
- 12 -
datasheet pdf - http://www.DataSheet4U.net/

12 Page





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