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PDF SSM9620M Data sheet ( Hoja de datos )

Número de pieza SSM9620M
Descripción P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Fabricantes Silicon Standard 
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SSM9620M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V drive
Fast switching
Simple drive requirement
Description
D
D
D
D
SO-8
G
S
S
S
BVDSS
R DS(ON)
ID
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SSM9620M is supplied in the SO-8 package, which is widely preferred
for commercial and industrial surface-mount applications. This device is well suited
for low voltage applications such as DC/DC converters.
-20V
20m
-9.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
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TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
- 20
±12
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Max.
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Rev.2.02 3/06/2004
www.SiliconStandard.com
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SSM9620M pdf
SSM9620M
7
I D =-9.5A
6
V DS =-10V
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
100
1
Crss
8 15 22
-V DS (V)
29
Fig 10. Typical Capacitance Characteristics
100.00
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1.2
10.00
T j =150 o C
1.00
T j =25 o C
0.9
0.6
0.10 0.3
0.01
0.1
0.4 0.7
-V SD (V)
1
1.3
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 3/06/2004
www.SiliconStandard.com
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