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Número de pieza | BUV27 | |
Descripción | SILICON POWER TRANSISTORS | |
Fabricantes | Comset Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUV27 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SEMICONDUCTORS
BUV27 – BUV27A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast
switching applications such as high frequency and efficiency converters, switching regulators
and motor control.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Pt
Tj
Tstg
Collector-Base Voltage
IE = 0
Collector-Emitter Voltage IB = 0
Emitter-Base Voltage
IC = 0
Collector Current
Collector Peak Current
tp = 10mswww.DataSheet.net/
Base Current
Base Current
tp = 10ms
Power Dissipation
Junction Temperature
Storage Temperature range
Value
BUV27 BUV27A
240 300
120 150
77
12
20
4
6
85 85
175
-65 to 175
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
V
V
V
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-mb
From junction to mounting base
Value
1.76
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
13
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BUV27.PDF ] |
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