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Teilenummer | 65N06 |
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Beschreibung | 60V N-CHANNEL MOSFET | |
Hersteller | KIA | |
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Gesamt 7 Seiten KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using
KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode. These devices are well suited for low voltage applications such
as automotive, DC/DC converters, and high efficiency switching for power management in portable and
battery operated products.
2. Features
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V
Low gate charge ( typical 48nC)
Low Crss ( typical 32.5pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175º maximum junction temperature rating
www.DataSheet.net/
3. Pin configuration
Pin
1
2
3
4
1 of 7
Function
Gate
Drain
Source
Drain
Datasheet pdf - http://www.DataSheet4U.co.kr/
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
www.DataSheet.net/
6 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ 65N06 Schematic.PDF ] |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |