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Número de pieza | MGF4936AM | |
Descripción | SUPER LOW NOISE InGaAs HEMT | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
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MGF4936AM
4pin flat lead package
DESCRIPTION
The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
Fig.1
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
General part number: MGF4936AM-75
Tape & reel 15000pcs/reel
www.DataSheet.net/
RoHS COMPLIANT
MGF4936AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO
Gate to drain voltage
VGSO
Gate to source voltage
ID Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
(Ta=25C )
Ratings
-3
-3
IDSS
50
125
-55 to +125
Unit
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25C )
Test conditions
V(BR)GDO Gate to drain breakdown voltage
IG=-10A
IGSS Gate to source leakage current
VGS=-2V,VDS=0V
IDSS Saturated drain current
VGS=0V,VDS=2V
VGS(off) Gate to source cut-off voltage
VDS=2V,ID=500A
Gs Associated gain
VDS=2V,
NFmin. Minimum noise figure
ID=7mA,f=12GHz
Note: Gs and NFmin. are tested with sampling inspection.
MIN.
-3.5
--
12
-0.1
11.0
--
Limits
TYP.
--
--
--
--
12.0
0.50
MAX
--
50
60
-1.5
--
0.70
Unit
V
A
mA
V
dB
dB
Publication Date : Oct., 2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page < Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
S PARAMETERS
(VDS=2V, ID=10mA, Ta=25deg.C)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
S11
(mag) (ang)
0.996 -13.4
0.970 -27.0
0.932 -40.5
0.880 -54.6
0.817 -68.8
0.746 -83.6
0.675 -99.8
0.595 -117.2
0.519 -135.5
0.454 -155.9
0.422 -176.2
0.395 161.6
0.413 140.3
0.447 124.3
0.501 107.1
0.562 89.5
0.613 75.5
0.654 62.5
0.701 51.6
0.736 41.3
S21
(mag) (ang)
4.971 164.1
4.929 148.5
4.872 133.1
4.799 117.8
4.702 102.5
4.585 87.3
4.471 72.0
4.295 56.8
4.089 42.2
3.890 27.9
3.724 14.5
3.532 1.3
3.399 -12.1
3.360 -25.2
3.287 -39.6
3.098 -55.0
2.925 -70.5
2.656 -85.3
2.375 -97.9
2.194 -110.2
S12
(mag) (ang)
0.013 80.2
0.026 71.3
0.038 62.1
0.050 53.1
0.060 44.3
0.069 36.0
0.078 27.6
0.085 18.5
0.089 10.2
0.092 2.0
0.096 -4.6
0.095 -12.2
0.099 -18.7
0.101 -21.2
0.104 -25.4
0.113 -33.7
0.118 -42.6
0.123 -51.8
0.123
-60. 1www.DataSheet.net/
0.124 -70.2
S22
(mag) (ang)
0.638 -10.3
0.623 -20.7
0.601 -31.0
0.571 -41.3
0.534 -51.7
0.492 -62.0
0.446 -73.4
0.388 -85.1
0.333 -96.2
0.272 -109.2
0.226 -123.1
0.174 -137.9
0.143 -162.2
0.143 176.8
0.162 151.6
0.206 121.7
0.264 99.6
0.317 79.8
0.369 65.2
0.419 52.1
NOISE PARAMETERS
Freq. NFmin
Γopt
rn
(GHz)
(dB)
(mag)
(ang)
6 0.19 0.70 47.3 0.21
7 0.23 0.63 62.4 0.18
8 0.28 0.56 79.1 0.13
9 0.32 0.49 97.6 0.10
10 0.37 0.43 117.4 0.07
11 0.41 0.38 138.7 0.06
12 0.46 0.34 161.3 0.05
13 0.51 0.32 -175.4 0.05
14 0.55 0.31 -151.3 0.06
15 0.60 0.33 -126.9 0.07
16 0.64 0.36 -102.3 0.11
17 0.69 0.42 -77.4 0.16
18 0.73 0.50 -52.3 0.22
Note: rn is normarised by 50 ohm.
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
Publication Date : Oct., 2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 6 Páginas | |
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Número de pieza | Descripción | Fabricantes |
MGF4936AM | SUPER LOW NOISE InGaAs HEMT | Mitsubishi Electric Semiconductor |
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