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PDF SPT312 Data sheet ( Hoja de datos )
| Número de pieza | SPT312 | |
| Descripción | Thyristor | |
| Fabricantes | Silicon Power | |
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SPT312
3000A, 4500V
100mm Thyristor
Features
Package
3000A, 4500V
40kA Pulse Current Capability
Fast Turn-off Time
Light Weight Package
A=5.375in, B=3.204in, C=0.792in, D=0.2902in
Notes - 1, 2 & 3
C
Description
The SPT312 reverse blocking thyristor is suitable for inverter applications up to
200Hz. The silicon junction is manufactured by the proven multi-diffusion process
and utilizes the exclusive eight (8) arms involute gate structure for lower switching
D
B
A
D
losses.
The design utilizes the revolutionary "Light Silicon Sandwich" or LSS technology,
a new termination technique which eliminates heavy refractory metal as a
substrate but still employs the alloyed anode interface necessary for high surge
current duty. The light weight plastic package allows the insertion of liquid
cooled chillers closer to the silicon junction. Copper inserts can be supplied for
MODEL RATING AVAILABILITY
PART NUMBER
VDRM
SPT312HK
4500
SPT312HH
4400
SPT312HF
4300
SPT312HD
4200
VRRM
4500
4400
4300
4200
adjoining commercially available flat surfaced heat dissipators.
SPT312HB
4100
4100
SPT312FT
4000
4000
Limiting Characteristics and Ratings
At TJ = 125oC, Unless Otherwise Specified
SYMBOL
UNITS
Repetitive Peak Off State Voltage.................................................................................…………………VD…RM…………4…500
V
Repetitive Peak Reverse Voltage.....................................................................................………………VR…RM…………4…500
Average On-State Current (TC=70oC) ...........................................................................…………………IT(…AV)………..3000
V
A
Peak Half-Cycle Non-Repetitive Surge Current ( 8.3ms / 10ms ).................................................………ITS…M . 40 / 37.5
For Fusing ( 8.3ms / 10ms ) …………………………………………………………………………..www.DataSheet.net/ I2t 6.6 / 7
Critical Gate Trigger Voltage ( VD = 12V, TJ = 25oC )…………………………………………………………V…GT…………4….5..
Critical Gate Trigger Current ( VD = 12V, TJ = 25oC ) …………………………………………………………IG…T …………3…00….
kA
MA2s
V
mA
Non-Trigger Gate Voltage ( VD = 2000V ) ………………………………………………………………………VG…D …………0….8……………V………………..
Non-Trigger Gate Current ( VD = 2000V ) ………………………………………………………………………IG…D …………1…5…………m…A………………..
Open Circuit Gate Voltage ………………………………………………………………………………………V…OC……………50……………V….
Short Circuit Gate Current ………………………………………………………………………………………I…SS……………5……………A…
Gate Pulse Duration and Rise Time ………………………………………………………………………1…0 …µs…du…ra…tio…n…/ 0….5…µ…s r…ise…time
Turn-Off Time (5A/µs, >100V, 400V/µs to 2000V) ……………………………………………………………T…off…………4…0…0 …………µ…s ………………
Turn-On Delay (VD = 50%VDRM) …………………………...……………………………………………………t…d ……………4……………µ…s ………………
Rate of Change of Voltage ( VD=70% VDRM) ......................................................................................d..v../.d.…t ……..1000
V/µs
Rate of Change of Current ( VD=50% VDRM ) ………………................................................................…di/dt
300 A/µs
Operating and Storage Temperature.......................................................................................………T…J, T…S…TG……0…to…+125
oC
Mounting Force......................................................................................................................……………F ………13…00…0-…16…00..0 lbs
Notes
1. Optional external posts dwg. # 0215B8331; Ni plated copper, 0.35" thick each.
2. Compressed thickness including external posts is 0.88" - 0.89" (22.35mm - 22.61mm).
3. Weight 14 oz., 2.7 lbs with posts.
Electrical Specifications
At TJ = 125oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Peak Off State Blocking
IDRM
VD = 80%VDRM
450 mA
Forward & Reverse Current
IRRM
350 mA
On State Voltage
Max. Peak Recovery Current
Thermal Resistance
VTM
IRM
RθJC
IT = 4kA Pulse
di/dt = 10A/µs Snap. S = .5-.33
Double Side Cooling
2.0
310
0.0049
V
A
oC/W
175 Great Valley Pkwy. Malvern, PA 19355 USA
Spt312.xls Rev. 1 7/09/2001
Datasheet pdf - http://www.DataSheet4U.co.kr/
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