IFRP460 Datasheet PDF - IXYS
| Part Number | IFRP460 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | IXYS | |
| Logo |  |
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There is a preview and IFRP460 download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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MegaMOSTM
Power MOSFET
IRFP 460
N-Channel Enhancement Mode, HDMOSTM Family
VDSS
ID(cont)
RDS(on)
= 500 V
= 20 A
= 0.27Ω
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
20 A
80 A
20 A
28 mJ
3.5 V/ns
260 W
-55 ... +150
www.DataSheet.net/
150
-55 ... +150
°C
°C
°C
1.15/10 Nm/lb.in.
6g
300 °C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l Repetitive avalanche energy rated
l Fast switching times
l
l
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
l High Commutating dv/dt Rating
Applications
l Switching Power Supplies
l Motor controls
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 12 A
GS D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500 V
2 4V
±100 nA
25 µA
250 µA
0.25 0.27 Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92825D (5/98)
1-4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IFRP460 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IFRP460.PDF Datasheet ] | |
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