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PDF RJH1CV6DPQ-E0 Data sheet ( Hoja de datos )
| Número de pieza | RJH1CV6DPQ-E0 | |
| Descripción | IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJH1CV6DPQ-E0 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Preliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT
Application: Inverter
R07DS0524EJ0500
Rev.5.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJH1CV6DPQ-E0
Switching Characteristics (Typical) (1)
1000
tf
100 td(off)
td(on)
10 tr
VCC = 600 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
VCC = 600 V, VGE = 15 V
IC = 30 A, Tc = 150°C
1000
100
10
1
tf
td(off)
td(on)
tr
10 100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 600 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tf
100 td(off)
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
VCC = 600 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
10
Eon
1 Eoff
0.1
1
10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Eon
Eoff
1
www.DataSheet.net/
VCC = 600 V, VGE = 15 V
0.1 IC = 30 A, Tc = 150°C
1 10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
Eon
Eoff
1
VCC = 600 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
0.1
25 50 75 100
125
150
Case Temperature Tc (°C)
(Inductive load)
R07DS0524EJ0500 Rev.5.00
Jun 12, 2012
Page 5 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
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