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PDF RJH6088BDPK Data sheet ( Hoja de datos )

Número de pieza RJH6088BDPK
Descripción High Speed Power Switching
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH6088BDPK Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH6088BDPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0390EJ0100
Rev.1.00
May 11, 2011
Features
Ultra high speed switching
tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
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Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES
VGES
IC
ic(peak) Note1
IDF(peak) Note2
PC
θj-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
Ratings
600
±30
60
120
120
268.8
0.465
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C / W
°C
°C
R07DS0390EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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RJH6088BDPK pdf
RJH6088BDPK
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C, Inductive load
tf
100
td(off)
td(on)
tr
10
1
10
100
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
td(off)
tf
100
td(on)
tr
VCC = 300 V, VGE = 15 V
10 IC = 60 A, Tj = 25°C, Inductive load
1 10
100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 60 A, Rg = 5 Ω, Inductive load
td(off)
100
tf
tr
td(on)
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C
Inductive load
100 Eoff
10
Eon
1
0.1
1
10 100
Collector Current IC (A)
Switching Characteristics (Typical) (4)
10000
1000
Eoff
Eon
100
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VCC = 300 V, VGE = 15 V
IC = 60 A, Tj = 25°C, Inductive load
10
1 10 100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (6)
10000
1000
Eoff
Eon
100
VCC = 300 V, VGE = 15 V
IC = 60 A, Rg = 5 Ω, Inductive load
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0390EJ0100 Rev.1.00
May 11, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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