|
|
Número de pieza | GB30RF60K | |
Descripción | IGBT PIM MODULE | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GB30RF60K (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Inverter
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Input Rectifier
Brake
Diode Maximum Forward Current
Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2 t (Non Repetitive)
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Document Number: 94479
ECONO2 PIM
Bulletin I27303 01/07
GB30RF60K
VCES = 600V
IC = 27A @ TC=80°C
tsc > 10μs @ TJ =150°C
VCE(on) typ. = 2.04V
R
23
24
Symbol
VCES
VGES
ICwww.DataSheet.net/
ICM
IFM
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Test Conditions
Ratings
600
±20
Continuos
25°C / 80°C
50 / 27
Pulsed
25°C
100
25°C
100
One IGBT
25°C
129
800
50/60Hz sine pulse
80°C
30
Rated VRRM applied, 10ms,
sine pulse
310
525
600
±20
Continuous
25°C / 80°C
30 / 20
Pulsed
25°C
60
One IGBT
25°C
100
600
150
-40 to +125
AC (1 min)
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Symbol
Min
Typical
Maximum Units
-
-
0.97
°C/W
- - 1.42
RθJC
-
-
- 2.44
- 1.25
- - 1.03
RθCS
-
2.7
0.05
-
-
3.3 Nm
170 g
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page Inverter
GB30RF60K
Bulletin I27303 01/07
16
14
12 300V
10
8
6
4
2
0
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 30A
1.6
ETOT
1.2
90
75
Tj = 25°C
Tj = 125°C
60
45
30
15
0
0 0.5 1 1.5 2
Vf (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
1
tdOFF
tF
tdON
tR
0.8
0.4
EON
EOFF
0.1
www.DataSheet.net/
0
10 20 30 40 50 60
Ic (A)
Fig. 9 - Typ. Energy Loss vs. IC
TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω; VGE= 15V
0.01
25 35 45 55 65
Ic (A)
Fig. 10 - Typ. Switching Time vs. IC
TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω;VGE= 15V
1.2 1
1
E (TOT)
0.8
0.6 E (ON)
tdOFF
0.1 tF
tdON
0.4 E (OFF)
tR
0.2
0
10 20 30 40 50
Rg (Ω)
Fig. 11 - Typ. Energy Loss vs. RG
TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V
Document Number: 94479
0.01
0 10 20 30 40 50
Rg (Ω )
Fig. 12- Typ. Switching Time vs. RG
TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page Brake
GB30RF60K
Bulletin I27303 01/07
10
1
0.5
0.3
0.1
0.1
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
TJτJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3
TC
τ3 τ3
Ri (°C/W) τi (sec)
0.256 0.000207
0.225 0.00051
0.769 0.023774
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (sec)
Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT)
10
0.5
1
0.3
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
TJτJ
τ1 τ1
www.DataSheet.net/
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3
TC
τ3 τ3
Ri (°C/W)
0.342
0.856
1.242
τi (sec)
0.000114
0.001417
0.035743
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
0.01
1E-05
1E-04
1E-03
1E-02
t1 , Rectangular Pulse Duration (sec)
1E-01
1E+00
Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode)
Document Number: 94479
www.vishay.com
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet GB30RF60K.PDF ] |
Número de pieza | Descripción | Fabricantes |
GB30RF60K | IGBT PIM MODULE | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |