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Teilenummer | 2N5114 |
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Beschreibung | SINGLE P-CHANNEL JFET | |
Hersteller | Linear Integrated Systems | |
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Gesamt 2 Seiten Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75Ω
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS1
6pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200°C
Junction Operating Temperature
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
TO-18
BOTTOM VIEW
G 2 3D
S1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP 2N5114
2N5115
2N5116
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
30
30
30
VGS(off) Gate to Source Cutoff Voltage
5 10 3 6 1 4
VGS(F) Gate to Source Forward Voltage
-0.7
-1
-1
-1
-1.0 -1.3
VDS(on) Drain to Source On Voltage
-0.7
-0.8
-0.5 -0.6
IDSS Drain to Source Saturation Current2
-30 -90
-15 -60 -5 -25
IGSS Gate Leakage Current
IG Gate Operating Current
5 500 500 500
-5
-10 -500
ID(off) Drain Cutoff Current
-10
-500
-10 -500
rDS(on) Drain to Source On Resistance
75 100 150
UNIT
V
mA
pA
Ω
CONDITIONS
IG = 1µA, VDS = 0V
VDS = -15V, ID = -1nA
IG = -1mA, VDS = 0V
VGS = 0V, ID = -15mA
VGS = 0V, ID = -7mA
VGS = 0V, ID = -3mA
VDS = -18V, VGS = 0V
VDS = -15V, VGS = 0V
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 12V
VDS = -15V, VGS = 7V
VDS = -15V, VGS = 5V
VGS = 0V, ID = -1mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2N5114 Schematic.PDF ] |
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