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Número de pieza | K3055 | |
Descripción | MOSFET ( Transistor ) - 2SK3055 | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K3055 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3055
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3055
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±30www.DataSheet.co.kr
±100
25
2.0
150
–55 to +150
15
22.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
5.0
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13094EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1997,1999
Datasheet pdf - http://www.DataSheet4U.net/
1 page DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
VGS = 4.0 V
40
20 VGS = 10 V
ID = 16 A
0 Pulsed
- 50 0 50 100 150
Tch - Channel Temperature - ˚C
2SK3055
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
VGS = 0 V
1
0.1 Pulsed
0
0.5 1.0
1.5
VSD - Source to Drain Voltage - V
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
10 000
1 000
100
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 10 Ω
tr
tf
td(off)
td(on)
10
www.DataSheet.co.kr
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
60
VDD = 48 V
30 V
12 V
40
VGS
12
8
20
VDS
4
ID = 30 A
0 10 20 30 40
QG - Gate Charge - nC
Data Sheet D13094EJ1V0DS00
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet K3055.PDF ] |
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