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Y60NM50 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer Y60NM50
Beschreibung STY60NM50
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 



Gesamt 8 Seiten
		
Y60NM50 Datasheet, Funktion
STY60NM50
N-CHANNEL 500V - 0.045- 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STY60NM50
500V
< 0.05
60 A
n TYPICAL RDS(on) = 0.045
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
www.DataSheet.co.kr
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
500 V
500 V
±30 V
60 A
37.8
A
240 A
560 W
6 KV
4.5 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1)ISD 60A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
1/8
Datasheet pdf - http://www.DataSheet4U.net/






Y60NM50 Datasheet, Funktion
STY60NM50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
www.DataSheet.co.kr
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Datasheet pdf - http://www.DataSheet4U.net/

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