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PDF AM6920NH Data sheet ( Hoja de datos )

Número de pieza AM6920NH
Descripción MOSFET ( Transistor )
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
AM6920NH
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe D
TSSOP-8 saves board space
S1
S1
• Fast switching speed
G1
• High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.022 @ VGS = 4.5 V
20 0.030 @ VGS = 2.5V
0.046 @ VGS = 1.8V
TSSOP-8
Top View
D
ID (A)
6.8
5.8
4.7
D
1 8D
2
7 S2
G1
G2
3 6 S2
4
5
G2
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TT ==2750 CC Iwww.DataSheet.co.kr
o
A
oD
A
IDM
20
V
±8
6.8
5.4 A
±30
Continuous Source Current (Diode Conduction)a
IS 1.5 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.2
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Typ Max
72 83 oC/W
100 120
Publication Order Number:
DS-AM6920NH_A
Datasheet pdf - http://www.DataSheet4U.net/

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