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Número de pieza | RJK4513DPE | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK4513DPE (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! RJK4513DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
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Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G1586-0100
Rev.1.00
Dec 08, 2009
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
450
±30
16
48
16
48
4
0.9
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1586-0100 Rev.1.00 Dec 08, 2009
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RJK4513DPE.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK4513DPE | N-Channel Power MOSFET / Transistor | Renesas |
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