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Teilenummer | 2SC4095 |
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Beschreibung | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |
Hersteller | NEC | |
Logo | ||
Gesamt 8 Seiten DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
• S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
5° 5°
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 35
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25 C)
V
V
V
mA
mW
C
C
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
UNIT
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
TEST CONDITIONS
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
1.0 A VCB = 10 V, IE = 0
1.0 A VEB = 1 V, IC = 0
DC Current Gain
hFE 50 100 250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10 GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance
Insertion Power Gain
Cre 0.25 0.8
S21e2
7.5
9.5
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
12
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
© 1987
[MEMO]
2SC4095
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 2SC4095 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SC4092 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
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2SC4093-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
2SC4093-T2 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
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