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Teilenummer | R8002ANX |
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Beschreibung | Nch 800V 2A Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 15 Seiten R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
Features
1) Low on-resistance.
800V
4.3
2A
36W
Outline
TO-220FM
Inner circuit
(1) (2) (3)
(2)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1)
(1) Gate
(2) Drain
*1 (3) Source
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Bulk
Application
Switching Power Supply
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
-
-
500
Taping code
-
Marking
R8002ANX
Absolute maximum ratings(Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
800
2
1
8
30
0.265
0.212
1
36
150
55 to 150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.C
R8002ANX
Electrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
1.4 Ta = 25ºC
VDD = 50V , RG = 25
1.2 VGF = 10V , VGR = 0V
1
0.8
0.6
0.4
0.2
0
0.01 0.1 1 10 100
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
300
Ta = 25ºC
250
200
150
100
50
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
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© 2015 ROHM Co., Ltd. All rights reserved.
6/13
2016.02 - Rev.C
6 Page R8002ANX
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
VGS
IG(Const.)
ID
D.U.T.
VDS
RL
VDD
Fig.3-1 Avalanche Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.4-1 dv/dt Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.5-1 di/dt Measurement Circuit
D.U.T.
RG
L
IF
DRIVER
MOSFET
VDD
Data Sheet
Fig.1-2 Switching Waveforms
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.2-2 Gate Charge Waveform
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.3-2 Avalanche Waveform
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
Fig.4-2 dv/dt Waveform
VDD
V(BR)DSS
IAS
Fig.5-2 di/dt Waveform
IF
0
trr
Irr 10%
Irr
drr / dt
Irr 90%
Irr 100%
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© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2016.02 - Rev.C
12 Page | ||
Seiten | Gesamt 15 Seiten | |
PDF Download | [ R8002ANX Schematic.PDF ] |
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