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R8002ANX Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer R8002ANX
Beschreibung Nch 800V 2A Power MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 15 Seiten
R8002ANX Datasheet, Funktion
R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
Features
1) Low on-resistance.
800V
4.3
2A
36W
Outline
TO-220FM
Inner circuit
(1) (2) (3)
(2)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1)
(1) Gate
(2) Drain
*1 (3) Source
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Bulk
Application
Switching Power Supply
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
-
-
500
Taping code
-
Marking
R8002ANX
Absolute maximum ratings(Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
800
2
1
8
30
0.265
0.212
1
36
150
55 to 150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.C






R8002ANX Datasheet, Funktion
R8002ANX
Electrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
1.4 Ta = 25ºC
VDD = 50V , RG = 25
1.2 VGF = 10V , VGR = 0V
1
0.8
0.6
0.4
0.2
0
0.01 0.1 1 10 100
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
300
Ta = 25ºC
250
200
150
100
50
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/13
2016.02 - Rev.C

6 Page









R8002ANX pdf, datenblatt
R8002ANX
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
VGS
IG(Const.)
ID
D.U.T.
VDS
RL
VDD
Fig.3-1 Avalanche Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.4-1 dv/dt Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.5-1 di/dt Measurement Circuit
D.U.T.
RG
L
IF
DRIVER
MOSFET
VDD
Data Sheet
Fig.1-2 Switching Waveforms
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.2-2 Gate Charge Waveform
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.3-2 Avalanche Waveform
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
Fig.4-2 dv/dt Waveform
VDD
V(BR)DSS
IAS
Fig.5-2 di/dt Waveform
IF
0
trr
Irr 10%
Irr
drr / dt
Irr 90%
Irr 100%
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2016.02 - Rev.C

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