Datenblatt-pdf.com

GW40NC60V Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer GW40NC60V
Beschreibung STGW40NC60V
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 10 Seiten
GW40NC60V Datasheet, Funktion
STGW40NC60V
N-CHANNEL 50A - 600V - TO-247
Very Fast PowerMESH™ IGBT
Table 1: General Features
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGW40NC60V 600 V
< 2.5 V
50 A
s HIGH CURRENT CAPABILITY
s HIGH FREQUENCY OPERATION UP TO
50 KHz
s LOSSES INCLUDE DIODE RECOVERY
ENERGY
s OFF LOSSES INCLUDE TAIL CURRENT
s LOWER CRES / CIES RATIO
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
Figure 1: Package
3
2
1
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm2
Figure 2: Internal Schematic Diagram
www.DataSheet.co.kr
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s UPS
s MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
STGW40NC60V
MARKING
GW40NC60V
PACKAGE
TO-247
PACKAGING
TUBE
July 2004
Rev. 10
1/10
Datasheet pdf - http://www.DataSheet4U.net/






GW40NC60V Datasheet, Funktion
STGW40NC60V
Figure 15: Thermal Impedance
Figure 17: Ic vs Frequency
Figure 16: Turn-Off SOA
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = T / RTHJ-C
considering T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
www.DataSheet.co.kr
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
6/10
Datasheet pdf - http://www.DataSheet4U.net/

6 Page







SeitenGesamt 10 Seiten
PDF Download[ GW40NC60V Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GW40NC60KD40A - 600V - short circuit rugged IGBTSTMicroelectronics
STMicroelectronics
GW40NC60V STGW40NC60VSTMicroelectronics
STMicroelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche