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GWM180-004X2 Schematic ( PDF Datasheet ) - IXYS Corporation

Teilenummer GWM180-004X2
Beschreibung Three phase full Bridge
Hersteller IXYS Corporation
Logo IXYS Corporation Logo 




Gesamt 6 Seiten
GWM180-004X2 Datasheet, Funktion
www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 180-004X2
VDSS = 40 V
ID25 = 180 A
RDSon typ. = 1.9 mW
Preliminary data
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
IF110 TC = 110°C (diode)
Maximum Ratings
40 V
± 20 V
180 A
136 A
120 A
182 A
112 A
88 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 100 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 20 V; ID = 100 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = +10/0 V; VDS = 24 V
ID = 135 A; RG = 39 ;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + RPin to )Chip
1.9
2.8
2.5
50
110
33
30
150
240
350
170
0.12
0.51
0.003
1.3
2.5 mW
mW
4.5 V
5 µA
µA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307c
1-6
Datasheet pdf - http://www.DataSheet4U.net/






GWM180-004X2 Datasheet, Funktion
www.DataSheet.co.kr
GWM 180-004X2
48
44
trr
40
[ns]
36
32
VR = 15 V
TVJ = 125°C
150 A
100 A
50 A
200 300 400 500 600 700
-diF /dt [A/µs]
Fig. 13 Reverse recovery time trr
of the body diodes vs. di/dt
800
0.6
0.5
Qrr
[µC]
0.4
0.3
0.2
IF = 50 A
100 A
150 A
0.1
0.0
200 400 600
-diF /dt [A/µs]
Fig. 15 Reverse recovery charge Qrr
of the body diodes versus di/dt
800
20
16
IRM 12
[A] 8
IF = 50 A
100 A
150 A
4
0
200 300 400 500 600 700 800
-diF /dt [A/µs]
Fig. 14 Reverse recovery current IRM
of the body diodes versus di /dt
400
350
300
IS 250
200
[A] 150
100
50
TJ = -25°C
25°C
125°C
150°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD [V]
Fig. 16 Source current IS versus
source drain voltage VSD (body diode)
Fig. 17 Definition of switching times
0.7
0.6
0.5
Zth 0.4
[K/W] 0.3
0.2
0.1
0.0
0.001
0.01
0.1
t [s]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
1 10
20110307c
6-6
Datasheet pdf - http://www.DataSheet4U.net/

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