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GWM160-0055X1 Schematic ( PDF Datasheet ) - IXYS Corporation
| Teilenummer | GWM160-0055X1 |
|
| Beschreibung | Three phase full Bridge | |
| Hersteller | IXYS Corporation | |
| Logo |  |
|
Gesamt 6 Seiten 
www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 160-0055X1
VDSS = 55 V
ID25 = 150 A
RDSon typ. = 2.7 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
55 V
± 20 V
150 A
115 A
120 A
75 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 100 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 12 V; ID = 160 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 24 V
ID = 100 A; RG = 39 Ω;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + 2RPin to )Chip
2.7
4.5
2.5
0.1
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
1.3
3.3 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307i
1-6
Datasheet pdf - http://www.DataSheet4U.net/
 
www.DataSheet.co.kr
50
160 A
100 A
40
IF = 50 A
30
20
10 VR = 24 V
TJ = 125°C
0
200 400 600 800 1000 1200
-diF/dt [A/µs]
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
0.6
0.5
0.4
0.3 160 A
100 A
0.2 IF = 50 A
0.1
0.0
200
400
600 800
-diF /dt [A/µs]
VR = 24 V
TJ = 125°C
1000 1200
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
VGS
0.1 VGS
VIDDS 0.9 ID
0.1 ID
td(on) tr
0.9 VGS
t
0.9 ID
td(off)
0.1 ID t
tf
Fig. 17 Definition of switching times
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
GWM 160-0055X1
30
25
20
15 160 A
100 A
10
IF = 50 A
5 VR = 24 V
TJ = 125°C
0
200 400 600 800 1000 1200
-diF/dt [A/µs]
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
350
300
VGS = 0 V
250
200
150
TJ = -25°C
100
25°C
125°C
50 150°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD [V]
Fig. 16 Source drain diode current IF vs.
source drain voltage VSD (body diode)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
GWM 160-0055X1
10
100
1000
10000
t [ms]
Fig. 18 Typ. thermal impedance junction to
heatsink ZthJH with heat transfer paste
20110307i
6-6
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
| Seiten | Gesamt 6 Seiten | |
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