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PDF 2SC3596 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3596 | |
| Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN1761B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1402/2SC3596
Ultrahigh-Difinition CRT Display
Video Output Applications
Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.
Package Dimensions
unit:mm
2009B
[2SA1402/2SC3596]
Features
· High fT: fT typ=700MHz.
· Small reverse transfer capacitance and excellent
high-frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP).
· Complementary pair with the 2SA1402/2SC3596.
· Adoption of FBET process.
( ) : 2SA1402
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)60V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=(–)250mA
VCE=(–)10V, IC=(–)100mA
IC=(–)100mA, IB=(–)10mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
IC=(–)100mA, IB=(–)10mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)100µA, IC=0
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
* : The 2SA1402/2SC3596 are classified by 50mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
Ratings
(–)80
(–)60
(–)4
(–)300
(–)600
1.2
8
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Ratings
min typ
40*
20
700
(–)80
(–)60
(–)4
2.3
(3.0)
1.8
(2.3)
max
(–)0.1
(–)0.1
320*
0.6
(–0.8)
(–)1.0
Unit
µA
µA
MHz
V
V
V
V
V
V
pF
pF
pF
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/12696TS (KOTO) X-7236/3237KI/2225MW, TS No.1761-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3596.PDF ] | |
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