SQ3419EEV Datasheet PDF - Vishay
| Part Number | SQ3419EEV | |
| Description | Automotive P-Channel MOSFET | |
| Manufacturers | Vishay | |
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SQ3419EEV
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
TSOP-6
Top V iew
- 40
0.050
0.078
- 7.4
Single
(1, 2, 5, 6) D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Typical ESD Protection 800 V
• Compliant to RoHS Directive 2002/95/EC
3 mm
16
25
(3) G
34
2.85 mm
Marking Code: 8Cxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(4) S
P-Channel MOSFET
TSOP-6
SQ3419EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Current
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 40
± 12
- 7.4
- 4.3
- 6.3
- 29
- 20
20
5
1.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 66714
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
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www.DataSheet.co.kr
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
- 40
- 43 ID = 1 mA
- 46
- 49
- 52
- 55
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
10 IDM Limited
Limited by RDS(on)*
1
100 µs
1 ms
10 ms
0.1
TC = 25 °C
Single Pulse
100 ms
1 s, 10 s, DC
BVDSS Limited
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ3419EEV
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
5
Document Number: 66714
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SQ3419EEV electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SQ3419EEV.PDF Datasheet ] | |
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