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PDF PSMN2R6-30YLC Data sheet ( Hoja de datos )
| Número de pieza | PSMN2R6-30YLC | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 01 — 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Min
-
[1] -
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
-
Tj junction temperature
Static characteristics
-55
RDSon
drain-source
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
on-state resistance see Figure 12
-
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
-
Typ Max Unit
- 30 V
- 100 A
- 106 W
- 175 °C
3.1 3.65 mΩ
2.35 2.8 mΩ
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NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 5
Min Typ Max Unit
- 1.25 1.42 K/W
10
Zth(j-mb)
(K/W)
003aaf661
1
δ = 0.5
0.2
0.1
10-1 0.05
P δ = tp
T
0.02
single shot
10-2
tp
T
t
1e-6
10-5
10-4
10-3
10-2
10-1 tp (s) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
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NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
8. Package outline
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
SOT669
L1
HD
E A A2 C
b2 c2
mounting
base
D1
L2
1 2 34
e b wM A
1/2 e
X
c
E1
b3
b4
A
A1 C
detail X
(A3)
θ
L
yC
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 A2 A3
b
b2 b3 b4
c
c2
D (1)
D1(1)
max
E(1)
E1(1)
e
H
L L1
mm
1.20
1.01
0.15
0.00
1.10
0.95
0.25
0.50
0.35
4.41
3.62
2.2
2.0
0.9
0.7
0.25
0.19
0.30
0.24
4.10
3.80
4.20
5.0
4.8
3.3
3.1
1.27
6.2
5.8
0.85
0.40
1.3
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
L2 w y
1.3
0.8
0.25
0.1
θ
8°
0°
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT669
MO-235
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
11-03-25
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
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